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Germanium nanoislands grown by radio frequency magnetron sputtering grown germanium nanoislands: annealing time dependent surface morphology and photoluminescence

Othaman, Zulkafli and Samavati, Alireza and Ghoshal, S. K. and Amjad, R. J. (2013) Germanium nanoislands grown by radio frequency magnetron sputtering grown germanium nanoislands: annealing time dependent surface morphology and photoluminescence. Chinese Physical B, 22 (9). pp. 1-5. ISSN 1674-1056

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Official URL: http://dx.doi.org/10.1088/1674-1056/22/9/098102

Abstract

Structural and optical properties of ~ 20 nm Ge nanoislands grown on Si(100) by radio frequency (rf) magnetron sputtering under varying annealing conditions are reported. Rapid thermal annealing at a temperature of 600°C for 30 s, 90 s, and 120 s are performed to examine the influence of annealing time on the surface morphology and photoluminescence properties. X-ray diffraction spectra reveal prominent Ge and GeO2 peaks highly sensitive to the annealing time. Atomic force microscope micrographs of the as-grown sample show pyramidal nanoislands with relatively high-density 1011 cm-2)). The nanoislands become dome-shaped upon annealing through a coarsening process mediated by Oswald ripening. The room temperature photoluminescence peaks for both as-grown 3.29 eV) and annealed 3.19 eV) samples consist of high intensity and broad emission, attributed to the effect of quantum confinement. The red shift (~0.10 eV) of the emission peak is attributed to the change in the size of the Ge nanoislands caused by annealing. Our easy fabrication method may contribute to the development of Ge nanostructure-based optoelectronics.

Item Type:Article
Uncontrolled Keywords:magnetron sputtering, Oswald ripening, Ge nanostructure
Subjects:Q Science
Divisions:Science
ID Code:40260
Deposited By: Narimah Nawil
Deposited On:19 Aug 2014 11:38
Last Modified:17 Mar 2019 12:21

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