Islam, Shumaila and Riaz, Saira and Abdul Rahman, Rosly and Naseem, Shahzad and Ottoman, Zulkafli (2013) Structural and dielectric properties of boron doped and un-doped mullite thin films. In: International Conference on Solid State Physics, 2013.
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Abstract
A sol–gel technique being simple, low cost and application oriented has been used to synthesize doped and un-doped mullite sols. These films have been spin-coated onto copper substrates. Effect of boron doping on the transformation kinetics of mullite was studied by preparing two sols with ratio Al/Si/B = 3/1/0 and Al/Si/B = 3/1/0.5. Surface morphology of thermally stable films showed uniformity in doped and un-doped samples. X-ray diffractometer results revealed orthorhombic mullite formation from both sols at a temperature of 500 �C for un-doped and at 350 �C for doped mullite films. Small crystallite size *11 nm and low dielectric value *5.84 (at 3 MHz) were observed in boron-doped films. Un-doped mullite films also showed relatively low dielectric constant, *6.36, as compared to the previously reported values. The stoichiometry of films was confirmed by EDX and spark source mass spectrometry.
Item Type: | Conference or Workshop Item (Paper) |
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Uncontrolled Keywords: | mullite, boron |
Subjects: | Q Science |
Divisions: | Chancellery |
ID Code: | 38529 |
Deposited By: | Liza Porijo |
Deposited On: | 25 May 2014 05:10 |
Last Modified: | 25 Sep 2017 04:15 |
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