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Morphological evolution of ternary inxga1-xas nanowires (NWs) grown with Au particle-assisted using vertical chamber MOCVD

Wibowo, Edy and Othaman, Zulkafli and Sakrani, Samsudi and Ameruddin , Amira S. and Aryanto, Didik and Muhammad, Rosnita and Sumpono, Imam and Hamidinezhad, Habib (2010) Morphological evolution of ternary inxga1-xas nanowires (NWs) grown with Au particle-assisted using vertical chamber MOCVD. Journal of Fundamental Sciences, 6 (2). pp. 131-135. ISSN 1823-626X

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Abstract

The morphology and chemical composition of InxGa1-xAs NWs grown on undoped GaAs (111)B substrate have been investigated using scanning electron microscopy (SEM) and energy dispersive x-ray (EDX), respectively. SEM images show that InxGa1-xAs NWs underwent morphological evolution as temperature changes. By changing the growth temperature, the growth mechanism of NWs was assumed to have changed. Both characterizations results suggested the growth mechanism has strong influence to the evolution of the NWs morphologies and also to the distribution of the chemical composition of NWs.

Item Type:Article
Uncontrolled Keywords:inxGa1-xAs NWs, morphological evolution, chemical composition, growth mechanism
Subjects:Q Science > Q Science (General)
Divisions:Science
ID Code:38005
Deposited By:INVALID USER
Deposited On:14 May 2014 14:35
Last Modified:26 Jan 2015 13:03

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