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Investigation on the properties of SnxSb10Se90-x chalcogenide semiconductor

Sakrani, Samsudi and Belal Adam, Abdallah and Wahab, Yussof (2002) Investigation on the properties of SnxSb10Se90-x chalcogenide semiconductor. Malaysian solid state science and technology society, 10 (1 & 2). pp. 60-67. ISSN 0128-7389

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Studies on tin-antimony-selenium (TAS) system of SnxSb10Se90-x (x= 0, 5, 10, 12.5, 15, 20 and 30) have been carried out using XRD, XGT and DTA and density measurement, so as to elucidate the structural states and thermal properties. XRD analysis for x= 0, 5, 10 and 12.5 gave an indicative amorphous phase, while that of the samples with x= 15, 20 and 30 maintain the crystalline structures. These were further confirmed by XGT results, which measured the weight percentages and elemental mapping of the samples. It was also observed that x plays important roles in determining the thermal quantities and density of the samples.

Item Type:Article
Uncontrolled Keywords:chalcogenide semiconductor; thermal properties
Subjects:Q Science > QC Physics
ID Code:3530
Deposited By: Samsudi Sakrani
Deposited On:19 Jun 2007 01:43
Last Modified:01 Jun 2010 03:10

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