Arora, Vijay Kumar (2012) Ballistic transport in nanoscale devices. In: Proceedings of the 19th International Conference - Mixed Design of Integrated Circuits and Systems, MIXDES 2012. Dept of Microelectronics, Lodz. Poland, pp. 17-24. ISBN 978-836295443-8
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Abstract
Ballistic transport from low-field to high-field regime is reviewed with transition from low-field ballistic mobility to high-field drift velocity limited to the intrinsic velocity for a given dimensionality. Equilibrium Fermi-Dirac to Boltzmann to nonequilibrium Arora distribution is delineated and applied. Ballistic injection from the contacts is shown to be of paramount importance as channels scale down to lengths below the scattering-limited mean free path (mfp). Mobility and drift velocity expressions covering the wide spectrum are obtained and compared with existing experimental data. The gamut spans low to high field transport, nondegenerate to degenerate statistics, and scattering-limited stochastic to unilateral streamlined regime.
Item Type: | Book Section |
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Additional Information: | Indexed by Scopus |
Uncontrolled Keywords: | ballistic mobility, contacts injection, intrinsic velocity, NEADF, nonequilibrium Arora Dsitribution, phonon emission |
Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
Divisions: | Electrical Engineering |
ID Code: | 34558 |
Deposited By: | INVALID USER |
Deposited On: | 07 Oct 2013 08:08 |
Last Modified: | 02 Feb 2017 05:04 |
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