Universiti Teknologi Malaysia Institutional Repository

Characterisation of InP/InGaAs heterojunction bipolar transistor as an optoeletronic mixer

Shaharuddin, Nur Amirah and Idrus, Sevia Mahdaliza and Isahak, Suhaila and Zulkifli, Nadiatulhuda (2012) Characterisation of InP/InGaAs heterojunction bipolar transistor as an optoeletronic mixer. In: The 18th Asia-Pacific Conference on Communications (APCC 2012).

Full text not available from this repository.

Abstract

The modeled and characterization of heterojunction bipolar transistor optoelectronic mixer (HBT OEM) has been demonstrated. The model takes into account the doping concentration and dimension of HBT InP/InGaAs. This device shown to have potential in photodetecting and performing frequency up-conversion which is optoelectronic mixer for millimeter wave radio over fiber application.

Item Type:Conference or Workshop Item (Paper)
Divisions:Electrical Engineering
ID Code:34022
Deposited By: Liza Porijo
Deposited On:17 Aug 2017 06:19
Last Modified:10 Sep 2017 07:31

Repository Staff Only: item control page