Shaharuddin, Nur Amirah and Idrus, Sevia Mahdaliza and Isahak, Suhaila and Zulkifli, Nadiatulhuda (2012) Characterisation of InP/InGaAs heterojunction bipolar transistor as an optoeletronic mixer. In: The 18th Asia-Pacific Conference on Communications (APCC 2012).
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Abstract
The modeled and characterization of heterojunction bipolar transistor optoelectronic mixer (HBT OEM) has been demonstrated. The model takes into account the doping concentration and dimension of HBT InP/InGaAs. This device shown to have potential in photodetecting and performing frequency up-conversion which is optoelectronic mixer for millimeter wave radio over fiber application.
Item Type: | Conference or Workshop Item (Paper) |
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Divisions: | Electrical Engineering |
ID Code: | 34022 |
Deposited By: | Liza Porijo |
Deposited On: | 17 Aug 2017 06:19 |
Last Modified: | 10 Sep 2017 07:31 |
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