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Growth and properties of stacked self-assembled In0.5Ga0.5As Quantum Dots

Aryanto, Didik and Othaman, Zulkafli and Ismail, Abd. Khamim (2012) Growth and properties of stacked self-assembled In0.5Ga0.5As Quantum Dots. Jurnal Penelitian Fisika dan Aplikasinya (JPFA), 2 (1). pp. 1-6. ISSN 2087-9946

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Official URL: http://dx.doi.org/10.26740/jpfa.v2n1.p1-6

Abstract

Self-assembled In0.5Ga0.5As quantum dots (QDs) were grown using metal-organic chemical vapor deposition (MOCVD) on GaAs (100) substrate with different number of stacking QDs layers. Surface study using atomic force microscopy (AFM) shows that surface morphology of the self-assembled QDs change with different number of stacking QDs layers caused by the previous QDs layers and the thickness of the GaAs spacer layers. PL measurement shows variation in the PL spectra as a function of number of stacking layers of In0.5Ga0.5As QDs. The PL peak positions blue-shifted from 1225 nm to 1095 nm and dramatically increase in intensity with increasing number of stacking QDs layers.

Item Type:Article
Uncontrolled Keywords:Quantum Dots, In0.5Ga0.5As, MOCVD, AFM, and photoluminescen
Subjects:Q Science
Divisions:Science
ID Code:30501
Deposited By: Yanti Mohd Shah
Deposited On:26 Feb 2014 16:47
Last Modified:27 Jun 2019 14:08

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