Sakrani, Samsudi and Othaman, Zulkafli and Ismail, Abd. Khamim (2011) The growth mechanism of silicon nanodots synthesized by sputtering method. In: 2010 International Conference on Enabling Science and Nanotechnology. American Institute of Physics, Kuala Lumpur, pp. 109-113. ISBN 978-073540897-5
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Official URL: http://dx.doi.org/10.1063/1.3586965
Abstract
Silicon quantum dots have been grown on sapphire substrate using a self-assembly method of physical vapour deposition. The samples were fabricated at low sputtering rate and varying experimental conditions. Apparently, the onset of nucleation took place during the first 5 minutes of deposition, followed by a further growth of stable islands so-called nanodots, with the measured radii comparable to the predicted values. Other measurement results confirmed the existence of these dots, including the bandgap energy ~1.80 eV from PL and a 5% at. silicon from EDX. The nucleation parameters were predicted as follows: Free energy change per unit volume Gv ~ -2.4×105Jmol-1; Surface energies per unit area, LN = 1.48Jm-2, NS = 21.6-88.3Jcm-2 and LS = 0.82×10-2Jm-2; Critical energies G* = 6.83×10-16-3.68×10-14?J; Critical radii r* = 20-72nm. This experimental evidence strongly support the early stage growth model of silicon quantum dot deposited on corning glass substrate.
Item Type: | Book Section |
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Uncontrolled Keywords: | nanodot, sapphire, self assembled growth, silicon |
Subjects: | Q Science > Q Science (General) |
Divisions: | Science |
ID Code: | 30098 |
Deposited By: | Fazli Masari |
Deposited On: | 21 Apr 2013 03:25 |
Last Modified: | 04 Feb 2017 23:58 |
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