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The growth mechanism of silicon nanodots synthesized by sputtering method

Sakrani, Samsudi and Othaman, Zulkafli and Ismail, Abd. Khamim (2011) The growth mechanism of silicon nanodots synthesized by sputtering method. In: 2010 International Conference on Enabling Science and Nanotechnology. American Institute of Physics, Kuala Lumpur, pp. 109-113. ISBN 978-073540897-5

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Official URL: http://dx.doi.org/10.1063/1.3586965

Abstract

Silicon quantum dots have been grown on sapphire substrate using a self-assembly method of physical vapour deposition. The samples were fabricated at low sputtering rate and varying experimental conditions. Apparently, the onset of nucleation took place during the first 5 minutes of deposition, followed by a further growth of stable islands so-called nanodots, with the measured radii comparable to the predicted values. Other measurement results confirmed the existence of these dots, including the bandgap energy ~1.80 eV from PL and a 5% at. silicon from EDX. The nucleation parameters were predicted as follows: Free energy change per unit volume Gv ~ -2.4×105Jmol-1; Surface energies per unit area, LN = 1.48Jm-2, NS = 21.6-88.3Jcm-2 and LS = 0.82×10-2Jm-2; Critical energies G* = 6.83×10-16-3.68×10-14?J; Critical radii r* = 20-72nm. This experimental evidence strongly support the early stage growth model of silicon quantum dot deposited on corning glass substrate.

Item Type:Book Section
Uncontrolled Keywords:nanodot, sapphire, self assembled growth, silicon
Subjects:Q Science > Q Science (General)
Divisions:Science
ID Code:30098
Deposited By: Fazli Masari
Deposited On:21 Apr 2013 03:25
Last Modified:04 Feb 2017 23:58

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