Wahab, Yussof and Othaman, Zulkafli and Hamidinezhad, Habib (2011) Ultra-sharp pointed tip Si nanowires produced by very high frequency plasma enhanced chemical vapor deposition via VLS mechanism. Journal of Materials Science, 46 (15). pp. 5085-5089. ISSN 0022-2461
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Official URL: http://dx.doi.org/10.1007/s10853-011-5435-6
Abstract
Needle-like silicon nanowires have been grown using gold colloid as the catalyst and silane (SiH4) as the precursor by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD). Si nanowires produced by this method were unique with sharpness below 3 nm. High resolution transmission electron microscopy (HRTEM) and X-ray diffraction technique (XRD) confirmed the single crystalline growth of the Si nanowires with (111) crystalline structure. Raman spectroscopy also has revealed the presence of crystalline Si in the grown Si nanowire body. In this research, presence of a gold nanoparticle on tip of the nanowires proved vapor–liquid–solid growth mechanism.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | crystalline Si, crystalline structure, gold colloid |
| Subjects: | T Technology > TP Chemical technology |
| Divisions: | Science |
| ID Code: | 29904 |
| Deposited By: | Yanti Mohd Shah |
| Deposited On: | 21 Apr 2013 03:36 |
| Last Modified: | 22 Oct 2020 04:07 |
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