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Morphology and chemical composition of inxGa1-xAs NWs Au-assisted grown at low growth temperature using MOCVD

Wibowo, Edy and Othaman, Zulkafli and Sakrani, Samsudi and Ameruddin, A. S. and Aryanto, D. and Muhammad, R. and Sumpono, Imam (2011) Morphology and chemical composition of inxGa1-xAs NWs Au-assisted grown at low growth temperature using MOCVD. Journal of Applied Sciences, 11 (7). pp. 1315-1320. ISSN 1812-5654

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Official URL: http://dx.doi.org/10.3923/jas.2011.1315.1320

Abstract

Cylindrical InxGa1-xAs NWs have been successfully grown at low growth temperature using MOCVD. Field Emission-Scanning Electron Microscopy (FE-SEM) characterization and Energy Dispersive X-ray (EDX) analysis have been used to investigate the morphology and chemical composition of NWs, respectively. Both characterization results consistently reinforce that the NWs growth were via direct impinging mechanism and NW have relatively uniform chemical composition.

Item Type:Article
Uncontrolled Keywords:au-assisted grown, direct impinging mechanism and chemical composition, InxGa1-xAs NWs
Subjects:Q Science
Divisions:Science
ID Code:29448
Deposited By: Yanti Mohd Shah
Deposited On:12 Mar 2013 10:18
Last Modified:25 Apr 2019 09:14

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