Yahaya, Hafizal and Ikoma, Yoshifumi and Sakita, Hirofumi and Nishino, Yuta and Motooka, Teruaki (2011) Position-controlled formation of Si nanopores by chemical vapor deposition of SiC/SOI(100). In: Seventh International Conference On Thin Film Physics And Applications. SPIE - International Society for Optical Engineering, Shanghai, China, 79951Y-1. ISBN 978-0-81948-568-7
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Official URL: http://dx.doi.org/10.1117/12.888531
Abstract
We investigated the position-controlled nanopore formation in the surface of thin Si layer of a Silicon on Insulator (SOI) substrate by utilizing chemical vapor deposition (CVD). The Si membrane was obtained by anisotropic etching of the handle wafer. The SiC film growth was carried out from the backside surface by utilizing CH3SiH3 pulse jet CVD at the substrate temperature of 900 degrees C. Square pits with the sizes of <= 0.5 mu m were observed on the Si membrane while no pit was formed on the top Si layer. This result indicates that the position of the nanopores on the top Si layer can be controlled without using SiO2 masks on the front side surface.
| Item Type: | Book Section |
|---|---|
| Uncontrolled Keywords: | nanopore, SOI, pulse jet CVD, SiC, Si, heteroepitaxial growth, pit formation |
| Subjects: | Q Science > Q Science (General) |
| Divisions: | Science |
| ID Code: | 29312 |
| Deposited By: | INVALID USER |
| Deposited On: | 13 Mar 2013 02:26 |
| Last Modified: | 27 Jul 2017 03:08 |
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