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FTIR spectroscopy characterization of Si-C bonding in SiC thin film prepared at room temperature by conventional 13.56Mhz RF PECVD

Omar, Muhammad Firdaus and Ismail, Abd. Khamim and Sumpono, Imam and Albert Alim, Emilly and Nawi, Mohd. Nazri and Mukri, Mohd ‘Azizir-Rahim and Othaman, Zulkafli and Sakrani, Samsudi (2012) FTIR spectroscopy characterization of Si-C bonding in SiC thin film prepared at room temperature by conventional 13.56Mhz RF PECVD. Malaysian Journal of Fundamental and Applied Sciences, 8 (5). pp. 259-261. ISSN 1823-626X

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Abstract

SiC thin film has been synthesized by using conventional 13.56MHz radio frequency plasma enhanced chemical vapour deposition (PECVD). The mixture of silane (SiH4) and methane (CH4) were used as precursor gases while hydrogen as carrier gas. The SiH4/CH4 ratio and the substrate temperature have been varied in order to examine the reaction of the active species which can produce the Si-C bonding in the deposited film. FTIR spectroscopy was used to analyse the type of bonding and particularly to confirm the existence of Si-C bonding by comparing the spectrums obtained from deposited thin film samples and standard reference sample of bulk SiC single crystal wafer. The existence of Si-C bonding was confirmed and it was slightly shifted from the bulk SiC wafer at around 722cm-1 and 817cm-1.

Item Type:Article
Additional Information:UTM Open Access Journal
Uncontrolled Keywords:PECVD, FTIR spectroscopy, silicon carbide
Subjects:Q Science > QC Physics
Divisions:Science
ID Code:29078
Deposited By: Norfaziatun Jalil
Deposited On:13 Mar 2013 11:52
Last Modified:21 Apr 2015 09:29

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