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The sensing performance of hydrogen gas sensor utilizing undoped-AlGaN/GaN HEMT (a)

Mohamad, Mazuina and Mustafa, Farahiyah and Abd. Rahman, Shaharin Fadzli and Zainal Abidin, Mastura Shafinaz and Al-Obaidi, N. K. A. and Hashim, Abd. Manaf and Abdul Aziz, Azlan and Hashim, Md. Roslan (2010) The sensing performance of hydrogen gas sensor utilizing undoped-AlGaN/GaN HEMT (a). Journal of Applied Sciences, 10 (16). 1797 -1801. ISSN 1812-5654

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Official URL: http://scialert.net/abstract/?doi=jas.2010.1797.18...


High temperature operation and long term stability are important requirements for gas sensor. The response of Pt-circular Schottky diodes fabricated on undoped AlGaN/GaN high-electron-mobility-transistor (HEMT) structure to hydrogen gas at various temperatures, ranging from 25 to 200°C has been investigated. A 5 nm-thick of catalytic Pt Schottky contact is formed by electron beam evaporation. Both forward and reverse currents of the device increase upon exposing to hydrogen gas. Although a slight change of forward and reverse current is obtained at room temperature upon exposure to hydrogen but both currents drastically increase with the increase of temperatures. The time-transient characteristics show the average current increment and decrement speed of 27.6 and 17.6 nA sec-1, respectively at constant forward bias of 1 V and temperature of 200°C.

Item Type:Article
Uncontrolled Keywords:Schottky diodes, AlGaN/GaN
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:26563
Deposited By: Widya Wahid
Deposited On:18 Jul 2012 10:52
Last Modified:31 Oct 2018 20:30

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