Universiti Teknologi Malaysia Institutional Repository

Resistance blow-up effect in micro-circuit engineering

Tan, Michael Loong Peng and Saxena, Tanuj and Arora, Vijay Kumar (2010) Resistance blow-up effect in micro-circuit engineering. Solid-State Electronics, 54 (12). pp. 1617-1624. ISSN 0038-1101

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Official URL: http://dx.doi.org/10.1016/j.sse.2010.06.024


The nonlinearity in the I–V characteristics of a scaled-down micro/nano-scale resistive channel is shown to elevate the DC and signal resistance as current approaches its saturation value. The deviation from traditional circuitengineering takes place when the applied voltage is increased beyond the critical voltage Vc = (Vt/l)L, where Vt is the thermal voltage, l is the ohmic mean free path, and L is the length of the conducting channel. This resistanceblow-up is more pronounced for a smaller-length resistor in a micro-circuit of two resistors with same ohmic value. The power consumed P = VI not only is lower but also is a linear function of voltage V as compared to the quadratic rise with V in the ohmic regime. The resistanceblow-upeffect also gives enhanced RC time constant for transients when a digital signal switches from low to high or vice versa. These results are of immense value to circuit designers and those doing device characterization to extract parasitic and transport parameters.

Item Type:Article
Uncontrolled Keywords:I–V characteristics, Resistance blow-up, Power degradation
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:26549
Deposited By: Widya Wahid
Deposited On:18 Jul 2012 09:54
Last Modified:31 Oct 2018 20:28

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