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Investigation of pillar thickness variation effect on oblique rotating implantation (ORI)-Based Vertical Double Gate MOSFET

Ismail, Razali and A. Riyadi, Munawar and Saad, Ismail (2010) Investigation of pillar thickness variation effect on oblique rotating implantation (ORI)-Based Vertical Double Gate MOSFET. Microelectronics Journal, 41 (12). 827 - 833. ISSN 0026-2692

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Official URL: http://dx.doi.org/10.1016/j.mejo.2010.07.004

Abstract

The rapid scaling of integrated circuit requires further shrinkage of lateral device dimension, which correlates with pillar thickness in vertical structure. This paper investigates the effect of pillar thickness variation on vertical double gate MOSFET (VDGM) fabricated using oblique rotating ion implantation (ORI) method. For this purpose, several scenarios of silicon pillar thickness were evaluated for 20–100 nm channel length. The source region was found to merge at pillar thickness below 75 nm, which results in floating body effect and creates isolated region in the middle of pillar. The vertical devices using ORI method show better performance than those with conventional implantation method for all pillar thickness, due to the elimination of corner effect that degrades the gate control. The presence of isolated depletion region in the middle of pillar at floating body increases parasitic effect for higher drain potential. By further reduction of pillar thickness towards fully depleted feature, the increase in gate-to gate charge coupling improves the performance of ORI-basedverticaldoublegateMOSFET, as evident in near-ideal swing value and lower DIBL, compared to the partially depleted and body-tied device.

Item Type:Article
Uncontrolled Keywords:pillar thickness, floating body effect, parasitic effect
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:26246
Deposited By: Narimah Nawil
Deposited On:29 Jun 2012 09:27
Last Modified:31 Oct 2018 20:20

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