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Harmonic responses in 2-D AlGaAs/GaAs HEMT devices due to plasma wave interaction

Hashim, Abdul Manaf and Kasai, Seiya and Alias, Qairul Izwan and Hasegawa, Hideki (2010) Harmonic responses in 2-D AlGaAs/GaAs HEMT devices due to plasma wave interaction. American Institute of Physics Conf. Series .

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Official URL: https://www.researchgate.net/publication/229057220...


Plasma waves are oscillations of electron density in time and space, and in deep submicron field effect transistors, typical plasma frequencies, ω p , lie in the terahertz range and do not involve any quantum transitions. Hence, using plasma wave excitation for detection and/or generation of THz oscillations is a very promising approach. In this paper, the investigation of plasma wave interaction between the plasma waves propagating in a short‐channel High‐Electron‐Mobility Transistor (HEMT) and the radiated electromagnetic waves was carried out. Experimentally, we have demonstrated the detection of the terahertz (THz) radiation by an AlGaAs/GaAs HEMT up to third harmonic at room temperature and their resonant responses show very good agreement with the calculated results.

Item Type:Article
Uncontrolled Keywords:surface plasma waves, drift plasma, THz device
Subjects:Q Science > Q Science (General)
ID Code:25947
Deposited By: Narimah Nawil
Deposited On:18 Jun 2012 11:25
Last Modified:22 Mar 2018 18:53

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