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Analytical modeling of high performance single-walled carbon nanotube field-effect-transistor

Chek, Desmond C. Y. and Tan, Michael Loong Peng and Ahmadi, Mohammad Taghi and Ismail, Razali and Arora, Vijay K. (2010) Analytical modeling of high performance single-walled carbon nanotube field-effect-transistor. Microelectronics Journal, 41 (9). 579 - 584. ISSN 0959-8324

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Official URL: https://doi.org/10.1016/j.mejo.2010.05.008


We present a novel analytical modeling of a zigzag single-walled semiconducting carbon nanotube field effect transistor (CNFET) by incorporating quasi-one-dimensional (Q1D) top-of-a-potential barrier approach. By implementing multimode carrier transport, we explore and compare the performance of a low- (360 cm2/Vs) and high-mobility (7200 cm2/Vs) CNFET model with experimental data from nanotube and 45 nm MOSFET, respectively, as well as existing compact models. Mobility and carrier concentration models are also developed to obtain a good matching with physical data. For a high mobility CNFET, we found that a maximum of 120 µA is obtained. In addition to this, a CNT-based inverter is also developed by constructing n-type and p-type CNFET in ORCAD’s analog behavioral model (ABM). A gain of as high as 5.2 is forecasted for an inverter of 80 nm CNFET.

Item Type:Article
Uncontrolled Keywords:carbon nanotube, analytical device modeling, low mobility
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:22857
Deposited By: Narimah Nawil
Deposited On:14 Sep 2017 12:31
Last Modified:21 Oct 2018 12:29

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