Heong, Yau Wei and Ahmadi, Mohammad Taghi and Ismail, Razali (2009) Analytical threshold voltage model of nanoscale biaxial ultrathin strained-Si MOSFETs. In: Regional Conference on Solid State Science and Technology 2009 (RCSSST 2009), 2009, Bayview Beach Resort, P. Pinang.
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Official URL: http://www.internano.org/node/3453
Abstract
In this paper, a new physically based analytical threshold-voltage model is presented for biaxial ultrathin strained Silicon (s-Si) MOSFETs for tbe first time, taking into account different doping layers in depletion layer. 'With the ultrathin strained si thickness which is less then De-Broglie wave length (:::::10nm), the effective density of states function is totally different with the thick strained si. This directly affects the Oatband voltage and built-in voltage. Thus, this novel model is taking into account the new flatband voltage and built-in voltage, including the important parameters such as Ge mole fraction in SiGe layer, body and channel doping, strained-Si and SiCe thickness. channel length.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Uncontrolled Keywords: | Oatband voltage, channel doping |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Electrical Engineering |
| ID Code: | 14823 |
| Deposited By: | Narimah Nawil |
| Deposited On: | 14 Sep 2011 04:39 |
| Last Modified: | 30 Jun 2020 08:38 |
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