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Scaling of vertical and lateral MOSFET in nanometer regime

Saad, Ismail and Sulaiman, Ima and Ismail, Razali (2007) Scaling of vertical and lateral MOSFET in nanometer regime. In: International Workshop and Conferences on Nanotechnology (IWCN 2007), 2007, Bangi, Selangor.

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The Metal Oxide Semiconductor Field Effect Transistor, or MOSFET for short, has an extremely high input gate resistance with the current flowing through the channel between the source and drain being controlled by the gate voltage.

Item Type:Conference or Workshop Item (Paper)
Uncontrolled Keywords:vertical, MOSFET, nanometer
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:14408
Deposited By: Liza Porijo
Deposited On:24 Aug 2011 07:08
Last Modified:12 Sep 2017 08:22

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