Universiti Teknologi Malaysia Institutional Repository

Characterization of BDD-based single-electron basic logic circuit using SIMON

Hashim, Abdul Manaf and Ong, Kwang Lee (2007) Characterization of BDD-based single-electron basic logic circuit using SIMON. In: ISSESCO International Workshop and Conference on Nanotechnology, 2007, Bangi.

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Official URL: http://dx.doi.org/10.11113/jt.v49.201


There has been a continuous trend in microelectronics to scale down device sizes during the last three decades. Several new nanoelectronic devices have already been proposed and one of the most promising devices is single-electron transistors (SETs). SET is being proposed as a new device for logic applications due to the drawback of further miniaturization of MOSFET. However, SETs are not suitable to be integrated using conventional architecture for digital logic operation due to low current drivability of SETs. Binary Decision Diagram (BDD) has been proposed for digital logic architecture to overcome a problem of low current drivability. In this paper, we review briefly the basic of SETs and then characterize some BDD-based single-electron logic circuits by using SIMON 2.0 simulator. Those circuits are BDD-based NOT logic circuit, AND logic circuit and 2-bit adder circuit. Simulation results show that those logic circuits perform logic operation correctly. SIMON simulator can serve as one of user-friendly simulators in designing and verifying larger BDD-based SET logic circuits with high accuracy and flexibility.

Item Type:Conference or Workshop Item (Paper)
Uncontrolled Keywords:single-electron tunneling, coulomb blockade, binary decision diagram, logic circuit, adde
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:13807
Deposited By: Liza Porijo
Deposited On:12 Aug 2011 01:34
Last Modified:01 Aug 2017 06:59

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