Numerical study of fermi energy for p-type silicon nanowire

Abstract

There is huge interest in the development of one dimensional silicon nanowire with extremely narrow cylindrical channel body as these devices are promising to take CMOS to the end-ofthe- roadmap. The band structure of Silicon is parabolic, in this condition density of state proportion of Fermi-Dirac integral that covers the carrier statistics to all degeneracy level is presented and its limits are obtained. In the nondegenerate regime the results replicate what is expected form, the Boltzmann statistics. However, the results vary in degenerate regime. Fermi energy with respect to band edge is function of temperature that independent of the carrier concentration in the nondegenrate regime. In the other strongly degenerate, the Fermi energy is a function of carrier concentration appropriate for given dimensionality, but is independent of temperature.