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Humidity effects on the electrical properties of hexagonal boron nitride thin films

Soltani, Ali and Thévenin, Philippe and Bakhtiar, H. and Bath, Armand (2005) Humidity effects on the electrical properties of hexagonal boron nitride thin films. Thin Solid Films, 471 . 277 -286. ISSN 00406090

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Official URL: http://dx.doi.org/10.1016/j.tsf.2004.06.142


Thin films of hexagonal boron nitride (h-BN) were grown by a plasma enhanced chemical vapour deposition (PECVD) technique. The quality of the films was assessed by infrared spectroscopy, microRaman spectroscopy as a function of annealing temperature and by X-ray photoelectron spectroscopy. The films proved to be thermally stable up to 1370 K. Current-voltage measurements were performed, as a function of humidity, using metal-insulator-semiconductor and metal-insulator-metal structures. Typical resistivities were found in the range 1013-1014 O cm in dry air and exhibit high sensitivity against humidity. The influence of the mean orientation of the c-axis of the BN films was considered. Sawtooth voltage pulse trains were also applied. Threshold switching phenomena were observed, but only in atmosphere containing humidity. The values of the switching voltages depend strongly on the relative humidity (RH), on the characteristics of the applied sawtooth voltage pulse trains, as well as on the nature of the metallic electrode.

Item Type:Article
Uncontrolled Keywords:electrical properties, hexagonal boron nitride
Subjects:T Technology > TA Engineering (General). Civil engineering (General)
T Technology > TP Chemical technology
ID Code:12442
Deposited By: S.N.Shahira Dahari
Deposited On:01 Jun 2011 09:56
Last Modified:13 Jun 2011 08:16

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