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Photoluminescence Studies of In0.5Ga0.5As/GaAs quantum dots

Wahab, Yussof and Yeong, Wai Woon and Deraman, Karim and Soh, Chew Beng and Muhammad, Rosnita (2006) Photoluminescence Studies of In0.5Ga0.5As/GaAs quantum dots. In: Proceedings of the 4th Annual Fundamental Science Seminar (AFSS 2006), 6th - 7th June 2006, Universiti Teknologi Malaysia, Skudai, Malaysia.

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In this paper, we present an experiment study of the photoluminescence properties of self-assembled In0.5sGa0.5As/GaAs quantum dots (aDs). High quality In0.5Ga0.5As aDs were grown by using Metalorganic Chemical Vapor Deposition (MOCVD). The low temperature photoluminescence (PL) spectrum of the Ino.sGao:As quantum dots surrounded by GaAs exhibit an emission peak at 1.137 to 1.182eV and a narrow linewidth (FWHM). The PL peak energy and intensity are varied with the excitation powers. Room temperature PL shows slightly lower peak energy with a broader spectrum linewidth. The distribution of the peak energy, peak intensity, and FWHM for the whole sample was obtained by using the PL mapping method.

Item Type:Conference or Workshop Item (Paper)
Additional Information:Excellence in R & D through advancement in fundamental sciences
Uncontrolled Keywords:In0.5Ga0.5As quantum dots, MOCVD, photoluminescence
Subjects:Q Science > QC Physics
ID Code:10834
Deposited By: Zalinda Shuratman
Deposited On:12 Nov 2010 09:07
Last Modified:12 Nov 2010 09:48

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