Design and analysis of the silicon-based integrated metal-insulator-metal capacitor

Abstract

At present, the high possible of miniaturization of a component has become an urgent necessity, particularly in silicon-based integrated circuit design. One of the keys to enhance the integrated circuits by constructing a Metal-Insulator-Metal (MIM) capacitors in the silicon-based of electronic application. Hence, it requires significantly increased specific capacitances by utilization of high-k dielectric materials. These dielectrics must be formed in three-dimensional capacitor structures in order to attain high capacitance per chip area. In this present work, the capacitor designed for silicon based integrated MIM capacitor using COMSOL Multiphysics software to create its cylindrical operational model. The identical structural parameters' capacitance levels and characteristics been simulated and analyzed such as the effect of different dielectric materials properties in the aspect of K value, distance and area of the material. It also investigated the effect of metallic plate area and thickness for the silicon based integrated MIM capacitor applied. Consequently, the high K-value of dielectric materials performance shown that the optimized parameters that suitable to be paired with Silicon-based integrated MIM capacitor where the surface area that perform good stability and capacitance is the surface area of 314.16 mm2 and 500 µm of its thickness. It is expected that this study provided a good simulation result, which verified the rationality of the silicon based integrated MIM capacitor design with its relationship of the material chosen and its optimized parameter for this MIM capacitor. Thus, this study offers a capable and competent way for the research of ideal materials for high-performance and the efficiency of an integrated MIM capacitor for flexible electronic applications.