28.81% efficient, low light intensity and high temperature sustainable ultra-thin IBC solar cell

Abstract

The interdigitated back contact (IBC) structure for crystalline-silicon photovoltaic device has long been recognized as an effective technique to overcome the 25% efficiency barrier by shifting all the electrical conducting elements to the backside of the cell. For this structure, the architecture of material interlayer IBC electrodes is very important to reduce the recombination rate without affecting the work function at the metal-semiconductor interface for optimum dissolution and extraction of carriers from the absorber layer. Higher efficiency requires a balance between absolute crystal material and impurities in the semiconductor, doping concentration and PN Junctions, smart grid wires and intelligent sunlight capturing. In this work, the fabrication of a low light intensity functional and high cell temperature sustainable, IBC solar cell is investigated. Silicon-Heterojunction layer to absorb greater solar spectrum and interdigitated N/P contacts have been implemented, which grants the cell to receive full surface sunlight, results in 29% efficiency. Luminous-an optoelectronic device simulator has been utilized to construct a very thin cell with dimensions of 100×150pm. The effects of sunlight intensity and module temperature on the performance have been investigated and the parameters for the most efficient structure were found with 28.81% efficiency and 87. 68%fillfactor rate, making it ultra-thin, flexible and durable providing a wide range of operational capabilities.