A. Hamid, Fatimah and Hamzah, Afiq and Mohamad, Azam and Ismail, R. and Razali, M. A. (2017) Impact of strain on electrical performance of Silicon Nanowire MOSFET. In: 11th IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2017, 23- 25 August 2017, Batu Ferringhi, Penang.
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Official URL: http://dx.doi.org/10.1109/RSM.2017.8069117
Abstract
A 3-Dimensional (3D) strained Silicon Nanowire MOSFET simulation and inversion charge model are presented. The simulation studies are conducted based on electrical parameters of nanowires such as current and threshold voltage using a ATLAS TCAD simulator. The inversion charge model with Germanium fraction is formulated using a unified charge model. These characterization studies are performed to investigate the performance of Silicon Nanowire based on the strain effect. The simulation and modeling works have been compared with numerical simulations. Findings have shown that the strained Silicon Nanowire performs better compared to the unstrained Silicon Nanowire MOSFET, where the on-state current increased, threshold voltage shifted by 0.2 V and inversion charge density improved by 30%.
| Item Type: | Conference or Workshop Item (Keynote) |
|---|---|
| Uncontrolled Keywords: | 3D, device modeling, strained silicon nanowire |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Electrical Engineering |
| ID Code: | 97135 |
| Deposited By: | Narimah Nawil |
| Deposited On: | 15 Sep 2022 06:41 |
| Last Modified: | 15 Sep 2022 06:41 |
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