Controlled defect on multilayer graphene surface by oxygen plasma

Abstract

The study pertaining defect fabrication of graphene has gained interest nowadays. To date, the fabrication of the defect using reactive ion etching on the oxygen flow rate has not been adequately studied. In this work, fabrication defect on multilayer graphene using reactive ion etching at 30 sccm and 50 sccm oxygen flow rates as a controlled parameter. The other parameters such as pressure, exposure time and power are set as well. The resistance of the exposed multilayer graphene devices at 30 sccm and 50 sccm are respectively 38 and 49 times higher than the non-exposed device. The increased oxygen flow rate in the reactive ion etching deteriorates the crystalline quality of the multilayer graphene thus declines its function as a device. It is suggested that only low oxygen flow rate is to be used to fabricate small amount of defect for the controlled defect purposes.