Sultan, S. M. and Pu, S. H. and Fishlock, S. J. and Chong, H. M. H. and Wah, L. H. and McBride, J. W. (2021) Fabrication and characterisation of resistive nanocrystalline graphite. In: 13th IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2021, 2 August 2021 - 4 August 2021, Virtual, Kuala Lumpur.
|
PDF
1MB |
Official URL: http://dx.doi.org/10.1109/RSM52397.2021.9511601
Abstract
This work demonstrates the feasibility of fabricating resistive nanocrystalline graphite (NCG) on a Si substrate. The NCG film thickness of 9 nm was deposited using metal-free plasma enhanced chemical vapour deposition (PECVD) on a 6-inch p-type silicon wafer. The surface and electrical properties of the resistors produced were investigated. The average grain size of the NCG thin film is 35 nm with 0.8 nm of surface roughness. The electrical characterization of the NCG strips show metal-like behaviour in which the resistance is proportional to the strip lengths. The sheet resistance is found to be 39 kohm/sq which is two orders of magnitude larger than graphene deposited using Chemical Vapour Deposition. This indicates the carrier transport across grain boundaries has a large influence on the overall resistance of the device. However, the nano-sized grains on the NCG material could be used to enhance the sensitivity of the material towards the environment.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Uncontrolled Keywords: | grain boundaries, nanocrystalline graphite, plasma enhanced chemical vapor deposition |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Electrical Engineering |
| ID Code: | 95958 |
| Deposited By: | Narimah Nawil |
| Deposited On: | 01 Jul 2022 06:23 |
| Last Modified: | 01 Jul 2022 06:23 |
Repository Staff Only: item control page
