Chuan, Mu Wen and Wong, Kien Liong and Hamzah, Afiq and Rusli, Shahrizal and Alias, Nurul Ezaila and Lim, Cheng Siong and Tan, Michael Loong Peng (2020) Device performance of silicene nanoribbon field-effect transistor under ballistic transport. In: 14th IEEE International Conference on Semiconductor Electronics, ICSE 2020, 28 - 29 July 2020, Kuala Lumpur, Malaysia.
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Official URL: http://dx.doi.org/10.1109/ICSE49846.2020.9166895
Abstract
Ballistic device performance of monolayer silicene nanoribbon (SiNR) field-effect transistors (FETs) is investigated in this paper. The electronic band structure of SiNR is calculated within the nearest neighbour tight-binding approximation. The top of the barrier ballistic transistor model is employed to compute the current-voltage characteristics of SiNR FETs. This theoretical model shows that the SiNR FET can achieve on-to-off current ratio up to 105, subthreshold swing of 65.12 mV/dec, and drain-induced barrier lowering of 44.44mV/V. The relationship between the drain current and the oxide thickness is also discussed. The findings show that silicene is suitable for future nanoelectronic applications.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Uncontrolled Keywords: | 2D material, ballistic transport |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Electrical Engineering |
| ID Code: | 94134 |
| Deposited By: | Widya Wahid |
| Deposited On: | 28 Feb 2022 13:24 |
| Last Modified: | 28 Feb 2022 13:24 |
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