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A review on effect of plasma power density and gas flow rate on structural properties of nanocrystalline silicon

Tarjudin, Nurul Aini and Sumpono, Imam and Sakrani, Samsudi (2009) A review on effect of plasma power density and gas flow rate on structural properties of nanocrystalline silicon. In: Proceedings of Second International Conference and Workshops on Basic and Applied Sciences & Regional Annual Fundamental Science Seminar 2009. Faculty of Science, Universiti Teknologi Malaysia. ISBN 978‐983‐9805‐74‐1

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Abstract

Effects of plasma power density and gas density on structural properties of nanocrystalline silicon grown by Plasma Enhanced Chemical Vapor Deposition (PECVD)are discussed in this paper. It has been found that both gas flow rates and plasma power density have an opposite effect on the film’s crystallinity. It was observed that higher plasma power density tend to increase the degree of crystallinity, while higher gas flow rates appeared to decrease its curves. It was also observed that microstructural defects were lower for samples with lower crystallinity.

Item Type:Book Section
Uncontrolled Keywords:nanocrystalline silicon, PECVD, gas flow rates, plasma power density
Divisions:Science
ID Code:9031
Deposited By: Dr Siew Ling Lee
Deposited On:30 Jun 2009 07:36
Last Modified:16 May 2011 09:33

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