UNSPECIFIED (2008) Low temperature heteroepitaxial growth of 3C-SiC on Si substrates by triode plasma CVD using DMS. Journal of Applied Sciences, 8 (19). pp. 3523-3527. ISSN 1812-5654
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Official URL: http://dx.doi.org/10.3923/jas.2008.3523.3527
The investigation of the dependence of the cubic silicon carbide (3C-SiC) film characteristics on the reaction pressures, growth temperatures and hydrogen dilution rates was carried out by rapid thermal triode plasma CVD using dimethylsilane as a source gas. The stoichiometric 3C-SiC films with good crystallinity and crystal orientation were successfully grown at 1100-1200Â°C. The crystallinity and the crystal orientation of SiC films grown at large dilution rate of above 200 and growth pressure of 0.3-0.7 Torr were better than those grown at small dilution rate and high growth pressure. Under large dilution rate, large amount of hydrogen radicals can be generated. It is speculated that excessive carbon atoms or weak bonds formed in SiC films were effectively extracted by the large amount of hydrogen radicals.
|Uncontrolled Keywords:||silicon carbide, triode plasma CVD, dimethylsilane, heteroepitaxial growth, stacking faults|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering|
|Deposited By:||INVALID USER|
|Deposited On:||03 Jul 2009 01:48|
|Last Modified:||02 Jun 2010 01:58|
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