Analytical investigation of superior gas sensor based on phosphorene

Abstract

The recent discovery of phosphorene, a 2D allotrope of semiconducting black phosphorus has aroused significant interest for future electronic device applications. Phosphorene isolated from bulk black phosphorus, is an intrinsic p-type material with a variable band gap for a variety of applications. In this study the structure of field effect transistor (FET) is employed where between the drain and source the phosphorene substance is used as the channel. We have developed and proposed analytical models with assuming that the gate voltage changes according to the NO 2 concentration variation, then we have derived mathematical model by using phosphorene conductance formula. Classification and Regression trees (CART) algorithm is also intended to obtain another model for the current–voltage characteristic. Studies were carried out by using CART as well as the analytical models. This information was used to compare our developed models with the extracted data from experimental work by Abbas, which indicates a satisfactory agreement and validity of proposed models.