Khademhosseini, Vahideh and Dideban, Daryoosh and Ahmadi, Mohammad Taghi and Ismail, Razali and Heidari, Hadi (2018) Impact of hydrogen adsorption on the performance of a single electron transistor utilizing fullerene quantum dots. ECS Journal of Solid State Science and Technology, 7 (11). M191-M194. ISSN 2162-8769
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Official URL: http://dx.doi.org/10.1149/2.0281811jss
Abstract
The single electron transistor (SET) is a nanoscale electronic device with fast operation speed. The selection of quantum dot as its Island can increase its speed. In this research, fullerene quantum dot is suggested as Island of SET and also hydrogen atoms are added to fullerene molecule. Comparison study shows that the number of hydrogen atoms can decrease coulomb blockade and zero current range. Moreover, increasing the number of fullerene quantum dots has an impact on coulomb diamond area, so reliability of SET can be improved. Therefore choosing suitable number of fullerene quantum dots and hydrogen atoms can SET current to a desired value.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | comparison study, coulomb diamonds, fast operation |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Electrical Engineering |
| ID Code: | 86572 |
| Deposited By: | Yanti Mohd Shah |
| Deposited On: | 30 Sep 2020 08:43 |
| Last Modified: | 30 Sep 2020 08:43 |
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