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Sol-gel preparation and characterization of ZnO doped thin solid films suitable for solar cell

Awang, N. J. and Aziz, Madzlan and M. Yusoff, A. R. (2008) Sol-gel preparation and characterization of ZnO doped thin solid films suitable for solar cell. Solid State Science and Technology Letters, 16 (1). pp. 45-54. ISSN 0128-8393

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Official URL: http://www.mass-malaysia.net/journal/jsystem/uploa...

Abstract

Europium doped zinc oxide (ZnO:Eu) and terbium doped zinc oxide (ZnO:Tb) thin films were prepared by sol-gel dip-coating process on the glass substrates. The content of terbium and europium in the sol was varied from 5% to 15%. Synthesis parameters such as annealing temperature and concentration of doped ions on the highly oriented crystal growth were studied in detail. The coating has been characterized by X-ray Diffraction (XRD), Field-Emission Scanning Electron Microscope (FESEM) and Luminescence Spectrometer. The Crystalline ZnO thin films were obtained following an annealing process at temperature between 300oC to 500oC for 2 hours. Eu:ZnO and Tb:ZnO thin films are transparent in near ultraviolet and visible region. With the annealing temperature increasing from 300oC to 500oC, the film was oriented more crystalline and the grain size of films was increased. The XRD analysis revealed singlephase ZnO hexagonal wurtzite structure. From luminescence analysis, there is energy transfer from the ZnO host to the doped Eu3+ and Tb3+ has occurred

Item Type:Article
Uncontrolled Keywords:solar cell
Subjects:Q Science > Q Science (General)
Q Science > QC Physics
Divisions:Science
ID Code:8591
Deposited By: Norshiela Buyamin
Deposited On:04 May 2009 06:18
Last Modified:04 May 2009 08:22

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