Junction properties analysis of silicon back-to-back Schottky diode with reduced graphene oxide Schottky electrodes

Abstract

Reduced graphene oxide (rGO)/silicon (Si) Schottky junction possesses promising attributes for various applications such as chemical sensor and photodetector. In this paper, a fabrication of simple back-to-back rGO/Si Schottky junction structure is presented. The device was fabricated via wet processes such as vacuum filtration, patterning by delamination, wet transfer and chemical reduction by ascorbic acid. From the current-voltage measurement, series resistance, barrier height and ideality factor were investigated at different temperature. Barrier height increases and ideality factor decreases with the increase of temperature indicating the inhomogeneity of the junction interface. By considering the Gaussian distribution of barrier height, the fabricated Schottky junction was shown to possess the mean barrier height of 1.24 eV with standard deviation value of 0.16 eV. The obtained mean barrier height was larger than the bandgap of Si, indicating the presence of thin insulation layer at the interface.