Alias, Nurul Ezaila and Ismail, Razali (2018) Graphene as charge storage layer in floating gate flash memory: comparison between n-channel and p-channel. In: IEEE Student Conference on Research and Development (SCORED 2018).
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| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Electrical Engineering |
| ID Code: | 83535 |
| Deposited By: | Narimah Nawil |
| Deposited On: | 30 Sep 2019 13:31 |
| Last Modified: | 16 Oct 2019 03:42 |
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