Mohamed Sultan, Suhana and Hasim, Harzawardi and Mohamad, Azam (2018) Feasability of zinc oxide nanowire as a temperature sensor: an analytical study. In: 13th IEEE International Conference on Semiconductor Electronics, ICSE 2018, 15 August 2018 - 17 August 2018, Pullman Kuala Lumpur City Centre Hotel and Residence Kuala Lumpur, Malaysia.
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Official URL: http://dx.doi.org/10.1109/SMELEC.2018.8481327
Abstract
The feasibility of Zinc Oxide (ZnO) nanowire as a temperature sensor was demonstrated by analytical study. A good quality I(V) model had been fitted with the experimental data on a single ZnO nanowire. It was found that the carrier concentration and mobility measured were 2.95×1018 cm-3 and 1.72 cm2 V-1 s-1, respectively. The I(V) model suit with the three-dimensional structure because their de Broglie wavelength smaller than the sample size. The current was observed to increase when the temperature applied increased from 27 °C to 277 °C. It was found that the carrier (electron) play an important part on current change. It was also found that the nanowire structure is more sensitive by a factor of 2 compared to nanowire film although the performances of the nanowire film was enhanced by the piezotronic effect
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Uncontrolled Keywords: | nanowire, temperature sensor |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Electrical Engineering |
| ID Code: | 83255 |
| Deposited By: | Siti Nor Hashidah Zakaria |
| Deposited On: | 30 Sep 2019 13:12 |
| Last Modified: | 17 Oct 2019 06:18 |
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