Universiti Teknologi Malaysia Institutional Repository

A 5 GHz CMOS tunable image-rejection low noise amplifier

Lee, Ler Chun and A'ain, Abu Khairi and Kordesch, Albert Victor (2006) A 5 GHz CMOS tunable image-rejection low noise amplifier. In: 2006 International RF and Microwave Conference, (RFM) Proceedings.

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Official URL: http://ieeexplore.ieee.org/document/4133573/


A 5 GHz image-rejection low-noise amplifier (IR-LNA) was designed using Silterra's CMOS 0.18 µm RF process. The IR-LNA employs a tunable third-order notch filter to reject the image signal. The notch filter was designed using a metal-insulator-metal capacitor (MTM) and a high quality factor (Q) active resonator. The notch frequency of the filter can be tuned using active inductor. The IR-LNA was simulated using HSPICE with BSIM3v3 MOSFET models. Simulation results show that the IR-LNA exhibits S11 of-22.67 dB, S21 of 16.45 dB, S12 of-75.84 dB, 2.66 dB noise figure (NF), and -21.8 dBm input compression point (P1dB) at 5 GHz. The power dissipation of the IR-LNA is 15.46 mW. With an intermediate frequency of 550 MHz, the image-rejection of the notch filter is -16dB. The tuning range of the notch filter is from 3.30 GHz to 4.15 GHz with a maximum -36 dB image rejection.

Item Type:Conference or Workshop Item (Paper)
Uncontrolled Keywords:active inductor, image-rejection, low-noise amplifier
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:8101
Deposited By: Zalinda Shuratman
Deposited On:27 Mar 2009 02:51
Last Modified:30 Sep 2017 04:31

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