Ler, Chun Lee and A'ain, Abu Bakar and Kordesch, Albert Victor (2006) A 5 GHz CMOS tunable image-rejection low noise amplifier. In: 2006 International RF and Microwave Conference, (RFM) Proceedings.
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Official URL: DOI: 10.1109/RFM.2006.331058
A 5 GHz image-rejection low-noise amplifier (IR-LNA) was designed using Silterra's CMOS 0.18 Âµm RF process. The IR-LNA employs a tunable third-order notch filter to reject the image signal. The notch filter was designed using a metal-insulator-metal capacitor (MTM) and a high quality factor (Q) active resonator. The notch frequency of the filter can be tuned using active inductor. The IR-LNA was simulated using HSPICE with BSIM3v3 MOSFET models. Simulation results show that the IR-LNA exhibits S11 of-22.67 dB, S21 of 16.45 dB, S12 of-75.84 dB, 2.66 dB noise figure (NF), and -21.8 dBm input compression point (P1dB) at 5 GHz. The power dissipation of the IR-LNA is 15.46 mW. With an intermediate frequency of 550 MHz, the image-rejection of the notch filter is -16dB. The tuning range of the notch filter is from 3.30 GHz to 4.15 GHz with a maximum -36 dB image rejection
|Item Type:||Conference or Workshop Item (Paper)|
|Uncontrolled Keywords:||active inductor, image-rejection, low-noise amplifier|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering|
|Deposited By:||Ms Zalinda Shuratman|
|Deposited On:||27 Mar 2009 02:51|
|Last Modified:||27 Mar 2009 02:52|
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