A'ain, Abu Khari and Ler, Chun Lee and Kordesch, Albert Victor (2006) A 2.4 GHz CMOS tunable image-rejection low-noise amplifier with active inductor. In: IEEE Asia-Pacific Conference on Circuits and Systems, Proceedings, APCCAS.
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Official URL: http://dx.doi.org/10.1109/APCCAS.2006.342107
Abstract
A 2.4-GHz CMOS fully-integrated tunable image-rejection (IR) low-noise amplifier (LNA) has been designed using Silterra's standard 0.18-µm CMOS process. The IR notch filter is designed using active inductor without using any passive inductor. With an image frequency of 1.34-GHz, post layout simulation results show the proposed IR LNA exhibits S21 of 27dB, S11 of-23.5dB, 2.2dB noise figure (NF) and input 1-dB compression point of-26dBm at 2.4-GHz. The IR of the IR LNA is -28dB and the tuning range for the IR notch filter is from 1.08 to 1.14-GHz. The first-stage of IR LNA dissipates not more than 10mw, including biasing circuit. The die area occupied by IR LNA is 0.49 mm2, excluding GSG pads
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Uncontrolled Keywords: | active inductor, image rejection, LNA, tunable notch filter |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Electrical Engineering |
| ID Code: | 8100 |
| Deposited By: | Zalinda Shuratman |
| Deposited On: | 27 Mar 2009 02:52 |
| Last Modified: | 24 Aug 2017 03:11 |
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