Universiti Teknologi Malaysia Institutional Repository

Investigation on the effects of oblique rotating ion implementation (ORI) for nanoscale vertical double gate NMOSFET

Saad, Ismail and Ismail, Razali and Arora, Vijay Kumar (2007) Investigation on the effects of oblique rotating ion implementation (ORI) for nanoscale vertical double gate NMOSFET. Journal of solid state science and technology letters, 14 (2). ISSN 0128-8393

Full text not available from this repository.


Item Type:Article
Uncontrolled Keywords:kiv record
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:8068
Deposited By: Norshiela Buyamin
Deposited On:25 Mar 2009 07:07
Last Modified:11 Oct 2017 08:30

Repository Staff Only: item control page