Morsin, M. and Isaak, S. and Morsin, M. and Yusof, Y. (2017) Characterization of defect induced multilayer graphene. International Journal of Electrical and Computer Engineering, 7 (3). pp. 1452-1458. ISSN 2088-8708
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Abstract
A study of oxygen plasma on multilayer graphene is done with different flow rates. This is to allow a controlled amount of defect fabricated on the graphene. Results from the study showed that the intensity ratio of defect between D peak and G peak was strongly depended on the amount of oxygen flow rate thus affected the 2D band of the spectra. The inter-defect distance LD ≥ 15 nm of each sample indicated that low-defect density was fabricated. The surface roughness of the multilayer graphene also increased and reduced the conductivity of the multilayer graphene.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | Multilayer graphene, Oxygen plasma, Raman spectroscopy, Reactive ion etching |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Electrical Engineering |
| ID Code: | 77075 |
| Deposited By: | Fazli Masari |
| Deposited On: | 30 Apr 2018 14:38 |
| Last Modified: | 30 Apr 2018 14:38 |
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