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Surface roughness and morphology analysis using an atomic force microscopy of polycrystalline diamond coated Si3N4 deposited by microwave plasma assisted chemical vapor deposition

Purniawan, A. and Hamzah, Esah and Mohd Toff, Mohd Radzi (2008) Surface roughness and morphology analysis using an atomic force microscopy of polycrystalline diamond coated Si3N4 deposited by microwave plasma assisted chemical vapor deposition. Diffusion and Defect Data Pt.B: Solid State Phenomena, 136 . pp. 153-160. ISSN 1012-0394

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Official URL: http://dx.doi.org/10.4028/3-908451-50-7.153

Abstract

Diamond is the hardest material and has high chemical resistant which is one form of carbon. In the present work a study was carried out on polycrystalline diamond coated Si3N4 substrate. The diamond was deposited by Microwave Plasma Assisted Chemical Vapor Deposition (MPACVD) under varying deposition parameters namely CH4 diluted in H2, microwave power and chamber pressure. SEM and AFM are used to investigate the surface morphology and surface roughness. Nucleation phenomena and crystal width were also studied using AFM. Based on SEM investigation it was found that the chamber pressure and %CH4 have more significant effects on nucleation and facet of polycrystalline diamond, In addition microwave power has an effect on the diamond facet that changed from cubic to cauliflower structure. Surface roughness results show that increasing the %CH4 has decreased surface roughness 334.83 to 269.99 nm at 1 to 3% CH4, respectively. Increasing microwave power leads to increase in diamond nucleation and coalescence which lead to less surface roughness. Increasing gas pressure may eliminate Si contamination however it reduces diamond nucleation.

Item Type:Article
Uncontrolled Keywords:Atomic force microscopy, polycrystalline diamond, silicon nitride, surface roughness
Subjects:T Technology > TJ Mechanical engineering and machinery
Divisions:Mechanical Engineering
ID Code:7704
Deposited By: Norhafizah Hussin
Deposited On:14 Jan 2009 04:02
Last Modified:14 Jan 2009 04:02

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