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Analytical study of drift velocity in low dimensional devices

Ahmadi, Mohammad Taghi and Riyadi , Munawar Agus and Ismail, Razali and Arora, Vijay K. and Saad, Ismail (2008) Analytical study of drift velocity in low dimensional devices. Journal of Fundamental Sciences, 4 (2). pp. 403-413. ISSN 1823-626X

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Abstract

Understanding of quantum limit in low dimensional devices helps to develop the new device types same as Carbon Nanotube Field Effect Transistor (CNTFET) and Naonowire. For each dimensionality the limitations on carrier drift velocity due to the high-field streaming of otherwise randomly velocity vector in equilibrium is reported. The results are based on the asymmetrical distribution function that converts randomness in zero-field to streamlined one in a very high electric field. The ultimate drift velocity for all dimensions is found to be appropriate thermal velocity for a nondegenerately doped sample of silicon, increasing with the temperature, but independent of carrier concentration. However, the ultimate drift velocity is the Fermi velocity for degenerately doped silicon increasing with carrier concentration but independent of the temperature

Item Type:Article
Uncontrolled Keywords:Drift velocity, Low Dimensional Devices, Quantum Limit
Subjects:Q Science > QC Physics
Divisions:Science
ID Code:7662
Deposited By: Maznira Sylvia Azra Mansor
Deposited On:13 Jan 2009 08:49
Last Modified:08 Oct 2010 09:46

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