Hashim, Abdul Manaf and Kasai , Seiya and Hashizume, Tamotsu and Hasegawa, Hideki (2006) Interdigital-gated HEMT structure for high frequency devices. In: 2006 International RF and Microwave Conference, (RFM) Proceedings, 12 - 14 Sept 2006, Putrajaya, Malaysia.
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Official URL: http://dx.doi.org/10.1109/RFM.2006.331082
Interdigital-gated AlGaAs/GaAs high electron mobility transistor (HEMT) structure was used to investigate the interaction between the drifting carrier plasma waves and electromagnetic (EM) waves. It was shown theoretically that the interaction in the range from microwave to terahertz (THz) at room temperature should produce negative conductance characteristics when the carrier drift velocity slightly exceeds the phase velocity of EM waves. S-parameter reflection measurements were carried out at room temperature for a frequency range from 1 to 20 GHz and a drastic change in conductance was observed at 5GHz and 10GHz with the increase of drain-source voltage. Large conductance change over 1000 mS/mm was obtained and it showed a peak at a certain frequency. The peak position could be controlled by changing the pitch size of the interdigital gates. These characteristics can be used for high frequency applications such as high-speed switching devices although a feature size of our interdigital-gated HEMT device is much larger than conventional HEMT device.
|Item Type:||Conference or Workshop Item (Paper)|
|Uncontrolled Keywords:||HEMT, interdigital, negative conductance, plasmawave, terahertz|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering|
|Deposited By:||Maznira Sylvia Azra Mansor|
|Deposited On:||13 Jan 2009 00:36|
|Last Modified:||01 Jun 2010 15:54|
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