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Low temperature heteroepitaxial growth of 3C-SiC on Si substrates by rapid thermal triode plasma CVD using dimethylsilane

Hashim, Abdul Manaf and Yasui, Kanji (2006) Low temperature heteroepitaxial growth of 3C-SiC on Si substrates by rapid thermal triode plasma CVD using dimethylsilane. In: IEEE International Conference on Semiconductor Electronics,Proceedings, ICSE, 29 Oct- 1 Dec 2006, Kuala Lumpur,Malaysia.

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Official URL: http://dx.doi.org/10.1109/SMELEC.2006.380713

Abstract

The investigation of the dependence of the cubic silicon carbide (3C-SiC) film characteristics on the reaction pressures, growth temperatures and hydrogen dilution rates was carried out by rapid thermal triode plasma CVD using dimethylsilane as a source gas. The stoichiometric 3C-SiC films with good crystallinity and crystal orientation were successfully grown at 1100-1200°C. The crystallinity and the crystal orientation of SiC films grown at large dilution rate of above 200 and growth pressure of 0.3 - 0.7 Torr were better than those grown at small dilution rate and high growth pressure. Under large dilution rate, large amount of hydrogen radicals can be generated. It is speculated that excessive carbon atoms or weak bonds formed in SiC films were effectively extracted by the large amount of hydrogen radicals.

Item Type:Conference or Workshop Item (Paper)
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:7630
Deposited By: Maznira Sylvia Azra Mansor
Deposited On:13 Jan 2009 00:29
Last Modified:01 Jun 2010 15:54

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