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Design, fabrication and characterization of GaAs-based interdigital-gated HEMT devices for solid-state THz wave amplifiers

Hashim, Abdul Manaf and Kasai , Seiya and Lizuki, Kouichi and Hashizume, Tamotsu and Hasegawa, Hideki (2007) Design, fabrication and characterization of GaAs-based interdigital-gated HEMT devices for solid-state THz wave amplifiers. In: AIP Conference Proceedings, 04 - 06th Sept. 2006, Kuala Terengganu, Malaysia.

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Official URL: http://dx.doi.org/10.1063/1.2739849

Abstract

Theoretical analysis of potential distribution in the interdigital-gated high electron mobility transistor (HEMT) plasma wave device was carried out. The dc I-V characteristics of capacitively coupled interdigital structure showed that uniformity of electric field under the interdigital gates was improved compared to the dc connected interdigital gate structure. Admittance measurements of capacitively coupled interdigital gate structure in the microwave region of 10-40 GHz showed the conductance modulation by drain-source voltage. These results indicate the existence of plasma wave interactions.

Item Type:Conference or Workshop Item (Paper)
Uncontrolled Keywords:HEMT, interdigital, negative conductance, plasma wave, terahertz
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:7628
Deposited By: Maznira Sylvia Azra Mansor
Deposited On:12 Jan 2009 07:51
Last Modified:08 Nov 2011 05:36

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