Hashim, Abdul Manaf and Kasai , Seiya and Iizuki, Kouichi and Hashizume, Tamotsu and Hasegawa, Hideki (2007) Novel structure of GaAs-based interdigital-gated HEMT plasma devices for solid-state THz wave amplifier. Microelectronics Journal, 38 (12). pp. 1268-1272. ISSN 0026-2692
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Official URL: http://dx.doi.org/10.1016/j.mejo.2007.09.027
Theoretical analysis of potential distribution in the interdigital-gated high electron mobility transistor (HEMT) plasma wave device was carried out. The dc I-V characteristics of capacitively coupled interdigital structure showed that uniformity of electric field under the interdigital gates was improved compared to the dc-connected interdigital gate structure. Admittance measurements of capacitively coupled interdigital gate structure in the microwave region of 10-40 GHz showed the conductance modulation by drain-source voltage. These results indicate the existence of plasma wave interactions.
|Uncontrolled Keywords:||Plasma wave, interdigital, negative conductance, HEMT, terahertz|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering|
|Deposited By:||Maznira Sylvia Azra Mansor|
|Deposited On:||12 Jan 2009 07:31|
|Last Modified:||24 Dec 2009 04:29|
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