Parimon, N.B and Yusof, S.S.B.M and Hashim, Abdul Manaf (2008) Modeling and characterization of Schottky diode on AlGaAs/GaAs HEMT structure for rectenna device. In: Proceedings - 2nd Asia International Conference on Modelling and Simulation, AMS 2008, 13-15 May 2008.
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Official URL: http://dx.doi.org/10.1109/AMS.2008.187
The modeling and characterization of Schottky diode on AlGaAs/GaAs HEMT structure for rectenna device is presented. The rectenna device can be used as a wireless power supply where it can capture microwave power and convert to the dc power to generate the others devices or circuits on a chip. Design and simulation of Schottky diode on AlGaAs/GaAs HEMT structure was carried out. From the simulated results, it was found that the operating frequency of the Schottky diode is tunable based on the length ofcoplanar waveguide.
|Item Type:||Conference or Workshop Item (Paper)|
|Uncontrolled Keywords:||HEMT structure, IQ chip, rectenna, schottky diode|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering|
|Deposited By:||Maznira Sylvia Azra Mansor|
|Deposited On:||13 Jan 2009 00:33|
|Last Modified:||01 Jun 2010 15:54|
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