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Modeling and characterization of Schottky diode on AlGaAs/GaAs HEMT structure for rectenna device

Parimon, N.B and Yusof, S.S.B.M and Hashim, Abdul Manaf (2008) Modeling and characterization of Schottky diode on AlGaAs/GaAs HEMT structure for rectenna device. In: Proceedings - 2nd Asia International Conference on Modelling and Simulation, AMS 2008, 13-15 May 2008.

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Official URL: http://dx.doi.org/10.1109/AMS.2008.187

Abstract

The modeling and characterization of Schottky diode on AlGaAs/GaAs HEMT structure for rectenna device is presented. The rectenna device can be used as a wireless power supply where it can capture microwave power and convert to the dc power to generate the others devices or circuits on a chip. Design and simulation of Schottky diode on AlGaAs/GaAs HEMT structure was carried out. From the simulated results, it was found that the operating frequency of the Schottky diode is tunable based on the length ofcoplanar waveguide.

Item Type:Conference or Workshop Item (Paper)
Uncontrolled Keywords:HEMT structure, IQ chip, rectenna, schottky diode
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:7620
Deposited By: Maznira Sylvia Azra Mansor
Deposited On:13 Jan 2009 00:33
Last Modified:01 Jun 2010 15:54

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