Parimon, Norfarariyanti and Mohd. Yusof, Siti Suhaila and Hashim, Abdul Manaf (2008) Modeling and characterization of Schottky diode on AlGaAs/GaAs HEMT structure for rectenna device. In: Proceedings - 2nd Asia International Conference on Modelling and Simulation, AMS 2008, 13-15 May 2008.
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Official URL: http://dx.doi.org/10.1109/AMS.2008.187
Abstract
The modeling and characterization of Schottky diode on AlGaAs/GaAs HEMT structure for rectenna device is presented. The rectenna device can be used as a wireless power supply where it can capture microwave power and convert to the dc power to generate the others devices or circuits on a chip. Design and simulation of Schottky diode on AlGaAs/GaAs HEMT structure was carried out. From the simulated results, it was found that the operating frequency of the Schottky diode is tunable based on the length ofcoplanar waveguide.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Uncontrolled Keywords: | HEMT structure, IQ chip, rectenna, schottky diode |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Electrical Engineering |
| ID Code: | 7620 |
| Deposited By: | Maznira Sylvia Azra Mansor |
| Deposited On: | 13 Jan 2009 00:33 |
| Last Modified: | 09 Oct 2017 07:35 |
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