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The sensing performance of undoped-AlGaN/GaN/sapphire HEMT hydrogen gas sensor

Mohamad, M and Hashim, Abdul Manaf and Meng, Fong Yee (2008) The sensing performance of undoped-AlGaN/GaN/sapphire HEMT hydrogen gas sensor. In: Proceedings- 2nd Asia International on Modelling and Simulation,AMS 2008, 13-15 May 2008.

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Official URL: http://dx.doi.org/10.1109/AMS.2008.184

Abstract

The hydrogen sensing characteristics of undoped-AlGaN/GaN/sapphire circular Schottky diodes are systematically studied and compared over wide hydrogen concentration and temperature ranges. High purity hydrogen gas was exposed to the sample together with the ambient gas of either air or pure nitrogen or without ambient gas (vacuum) at pressure in the range of 50 Torr to 200 Torr was used for both types of ambient gases. The sensing characteristics at different hydrogen concentration are investigated. The sensitivity to hydrogen gas was also investigated in dependence of various catalytic metals thickness and operating temperatures.

Item Type:Conference or Workshop Item (Paper)
Uncontrolled Keywords:Catalytic metal, sdensor, wide bandgap
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:7617
Deposited By: Maznira Sylvia Azra Mansor
Deposited On:12 Jan 2009 04:49
Last Modified:01 Jun 2010 15:53

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